The shelf life of a NAND gate is approximately 100,000 write/erase cycles. It is faster, has a lower cost per bit, requires less chip area per cell and has added resilience. NAND was developed by Toshiba a year after NOR was produced. The shelf life of NOR flash is 10,000 to 1,000,000 write/erase cycles. The NOR gate interface supports full addresses, data buses and random access to any memory location. NOR is a type of memory cell created by Intel in 1988. In 1988, Intel Corporation produced the first commercial NOR-type flash chip, which replaced the permanent read-only memory (ROM) chip on PC motherboards containing the basic input/output operating system (BIOS).Ī flash memory chip is composed of NOR or NAND gates. Masuoka also invented a type of memory known as SAMOS and developed a 1Mb dynamic random access memory (DRAM). Masuoka’s objective was to create a memory chip preserving data when the power was turned off. Flash memory was named after its capability to erase a block of data “"in a flash.” Dr. Fujio Masuoka, an inventor and mid level factory manager at Toshiba Corporation (TOSBF). Techopedia Explains Flash Memoryįlash memory was first introduced in 1980 and developed by Dr. Flash memory is similar to the standard MOFSET, except the transistor has two gates instead of one. Floating-gate transistors are electrically isolated and use a floating node in direct current (DC). Floating-gate transistors, or floating gate MOSFET (FGMOS), is similar to MOSFET, which is a transistor used for amplifying or switching electronic signals. Flash memory is a distinct type of EEPROM, which is programmed and erased in large blocks.įlash memory incorporates the use of floating-gate transistors to store data. EEPROM is a type of data memory device using an electronic device to erase or write digital data. Flash memory is a type of electronically erasable programmable read only memory (EEPROM), but may also be a standalone memory storage device such as a USB drive.
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